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Leo Esaki. Leo Esaki (江崎 玲於奈; transkripsi yang benar Esaki Reona; juga dikenal sebagai Esaki Leona, (lahir 12 Maret 1925) adalah fisikawan Jepang - Amerika Serikat yang bekerja pada peralat kristal ( diode semikonduktor) dan menunjukkan bahwa besarnya hambatan listrik kadang-kadang menurun dengan bertambahnya arus listrik.
Leo Esaki. Nobel Prize in Physics 1973 together with Ivar Giaeverand Brian D. Josephson. "for their experimental discoveries regarding tunneling phenomena in semiconductors and superconductors, respectively. Reiona ‘Leo’ Esaki was born in Osaka, Japan, on 12 March, 1925, in the final stages of the Taishō period, during which Japan ...
Leo Esaki ( japonsky 江崎 玲於奈 [Esaki Reona] ; 12. března 1925, Ósaka, Japonsko) [1] je japonský experimentální fyzik a elektronik, proslulý zejména studiem tunelového jevu u elektronů v pevných látkách, zejména polovodičích. Tyto práce vedly ke konstrukci Esakiho (tunelových) diod .
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Leo Esaki, născut Leona Esaki, (în japoneză 江崎 玲於奈 Esaki Reona, n. 12 martie 1925 , Takaida ( d ) , Prefectura Osaka , Japonia ) este un fizician japonez , laureat al Premiului Nobel pentru Fizică în 1973 împreună cu Ivar Giaever și Brian David Josephson pentru descoperirea fenomenului de tunelare a electronilor .
In 1969, Dr. ESAKI predicted that if one-dimensional periodic structural changes are artificially built in semiconductor crystals, semiconductor superlattices will be formed to induce unique phenomena such as a differential negative-resistance effect. He developed a thin-film crystal growth method, which can be regulated quite precisely in ultrahigh vacuum, called molecular beam epitaxy. In ...
Brian David Josephson. The Nobel Prize in Physics 1973 was divided, one half jointly to Leo Esaki and Ivar Giaever "for their experimental discoveries regarding tunneling phenomena in semiconductors and superconductors, respectively" and the other half to Brian David Josephson "for his theoretical predictions of the properties of a supercurrent ...
