Suchergebnisse
Suchergebnisse:
As IC technology advances to 16/14 nm and beyond, FinFET architecture with advantage of excellent leakage performance becomes main stream in IC industry. However, it also brings big challenges for integration and processes due to its very aggressive structure and profile, CD shrinkage, shadow effect and gap-fill difficulty. In this work, atomic layer deposition (ALD) metal films, including TaN ...
7. Juli 2015 · In this study we measure stress from blanket layer films and combinations of TiN, TiC, and TaN deposited on Hf oxide, at thicknesses that are typically used for advanced metal–oxide–semiconductor field-effect transistor (MOSFET) devices. Tungsten (W) deposited on top of the WFM layer stacks is also measured.
A stack, comprising alternate plies of reinforcing woven fabric and thermoplastic film, sepa-rated by steel or aluminium caul plates or PTFE foil, is placed between two press platens. The production process consists of three phases: cool the press to solidify the laminates.
1. Juni 2008 · Film stacking is used commercially for a variety of products where impregnation occurs in a double belt press [13], [14]. The FF process uses UD carbon fibres that have been spread under tension to give a highly aligned homogeneous un-impregnated (dry) fibre strip or ‘band’ that forms the full tape width, and hence the inter bundle effect is not applicable here, leading to a single scale ...
The mechanical properties of CVD-grown multilayer graphene films suspended on a circular hole with a diameter of 70 µm can be increased by 20%, and multilayer graphene films prepared by layer-layer stacking process can be increased by up to 400% for the same size. The corresponding mechanism was also discussed in detail, which might pave the way for building high-performance electrical ...
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