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This Inter-poly Oxide-Nitride-Oxide (ONO) dielectric film has been widely used as dielectric films in stacked gate Flash memory devices. The ONO dielectric film plays an important role in ensuring good reliability in flash memory devices. In this paper, the characteristics of ONO dielectric films have been analyzed. These ONO films were fabricated using different methods, including ...
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17. Okt. 2023 · 3D-NAND flash memory is currently essential in the semiconductor industry due to the interference issue between memory cells of the conventional planar type. In order to vertically stack the memory, an oxide–nitride stack structure is formed using plasma enhanced chemical vapor deposition (PECVD) equipment. Thereafter, part of the silicon nitride (Si3N4) layer is removed by wet etching using ...
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25. Dez. 2021 · To induce the crystallization of the IGZO thin film, tantalum (Ta) metal capping layer was processed on the a-IGZO layer, followed by annealing at 300 ℃ under the O 2 atmosphere for 1 h, which is based on the metal induced lateral crystallization (MILC) [25]. After the post-deposition annealing, the aluminum (Al) source/drain electrodes were finally deposited on the a-IGZO or CAAC-IGZO ...
1. Okt. 2016 · Moreover, still 3D NAND Flash memories suffer from the known issues inherited from 2D NAND Flash such as long memory access time (> 20 to 50 μs), degraded program/erase cycling endurance (< few thousands), low retention for extremely scaled devices and the fact that the erase operation must be carried out in a large block size (> 2 MB). In addition, the current prevailing writing operation in ...
12. Mai 2021 · Amorphous carbon hard mask (ACHM) films are widely used as etching hard masks in 3D-NAND flash memory, which has put forward higher requirements in the film deposition rate, film transparency, uniformity, and selective etching. In this work, the ACHM film processing is engineered and optimized by comparatively studying acetylene (C2H2) and propylene (C3H6) as carbon sources at the different ...
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