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Januar 1929 in der Präfektur Kagoshima; † 1. April 2021 in Nagoya [1]) war ein japanischer Ingenieurwissenschaftler . Akasaki stellte 1989 erstmals blaue Leuchtdioden, basierend auf dem p-n-Übergang, mit dem Halbleitermaterial Galliumnitrid her. [2] . Er erhielt dafür im Jahr 2011 die von der IEEE vergebene Auszeichnung IEEE Edison Medal. [3] .
Isamu Akasaki (赤﨑 勇, Akasaki Isamu, January 30, 1929 – April 1, 2021) was a Japanese engineer and physicist, specializing in the field of semiconductor technology and Nobel Prize laureate, best known for inventing the bright gallium nitride p-n junction blue LED in 1989 and subsequently the high-brightness GaN blue LED as well.
1. Apr. 2021 · Isamu Akasaki. The Nobel Prize in Physics 2014. Born: 30 January 1929, Chiran, Japan. Died: 1 April 2021, Nagoya, Japan. Affiliation at the time of the award: Meijo University, Nagoya, Japan; Nagoya University, Nagoya, Japan. Prize motivation: “for the invention of efficient blue light-emitting diodes which has enabled bright and ...
29. Juli 2021 · The 2014 Nobel laureate, Isamu Akasaki, sadly passed away in April at the age of 92. He was highly regarded for his work on the invention of efficient blue light-emitting diodes and research...
- Yasuo Koide
- koide.yasuo@nims.go.jp
- 2021
7. Okt. 2014 · 41 Citations. 12 Altmetric. Metrics. The 2014 Nobel Prize in Physics has been awarded to Isamu Akasaki, Hiroshi Amano and Shuji Nakamura "for the invention of efficient blue light-emitting...
- Joerg Heber
- 2014
Dr. Isamu Akasaki. 1952. Graduated from the School of Science, Kyoto University. Began working at Kobe Kogyo Corporation. (Now part of Fujitsu, Ltd.) 1959. Research Associate, School of Engineering, Nagoya University. 1964. Lecturer, School of Engineering, Nagoya University.
Nov. 98–present: Member of the Finnish Institute in Japan. Apr. 01–present: Research Fellow at Nagoya University Akasaki Research Center. Apr. 02–Mar. 04: Councilor of JST. Apr. 03–Mar. 06: Chairman of R&D Strategic Committee on the Wireless Devices based on Nitride Semiconductors at the METI. 4.
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