2018
Suchergebnisse
Suchergebnisse:
William Bradford Shockley Jr. (February 13, 1910 – August 12, 1989) was an American inventor, physicist, and eugenicist. He was the manager of a research group at Bell Labs that included John Bardeen and Walter Brattain.
William Bradford Shockley (* 13. Februar 1910 in London; † 12. August 1989 in Stanford) war ein US-amerikanischer Physiker. 1956 wurde ihm der Nobelpreis für Physik zuerkannt. Seine späteren Werke zur Genetik werden als rassistisch eingeordnet. [1] [2] Inhaltsverzeichnis. 1 Leben. 2 Werk. 3 Beschäftigung mit Psychologie und Genetik.
8. Apr. 2024 · William B. Shockley (born Feb. 13, 1910, London, Eng.—died Aug. 12, 1989, Palo Alto, Calif., U.S.) was an American engineer and teacher, cowinner (with John Bardeen and Walter H. Brattain) of the Nobel Prize for Physics in 1956 for their development of the transistor, a device that largely replaced the bulkier and less-efficient ...
17. Nov. 2022 · The coinventor of the transistor, William Shockley, who along with John Bardeen and Walter Brattain won the 1956 Nobel Prize in Physics, is correctly recognized as a primary architect of the computer age. Gordon Moore (cofounder of Intel Corporation) famously said that Shockley put the silicon in “Silicon Valley.”.
This book takes a fresh look at the work, thoughts, and life of 1956 Nobel Prize winner William B. Shockley. It reconstructs Shockley’s upbringing, his patriotic achievements during World War II, his contribution to semiconductor physics – culminating with the epoch-making invention of the transistor – and his views on the social issues ...
24. Apr. 2020 · Veröffentlicht am 24. April 2020. William Shockley Jr. (13. Februar 1910–12. August 1989) war ein amerikanischer Physiker, Ingenieur und Erfinder, der das Forschungsteam leitete, dem 1947 die Entwicklung des Transistors zugeschrieben wurde. Für seine Leistungen erhielt Shockley 1956 den Nobelpreis für Physik.
William Shockley gained fame and shared a Nobel Prize for his development of point-contact transistors, work that provided the basis for one of the sweeping technological revolutions of the twentieth century. His junction and field-effect transistors became workhorses of the electronics industry.
Facts. Photo from the Nobel Foundation archive. William Bradford Shockley The Nobel Prize in Physics 1956. Born: 13 February 1910, London, United Kingdom. Died: 12 August 1989, Palo Alto, CA, USA. Affiliation at the time of the award: Semiconductor Laboratory of Beckman Instruments, Inc., Mountain View, CA, USA.
24. Apr. 2020 · By. Robert Longley. Published on April 24, 2020. William Shockley Jr. (February 13, 1910–August 12, 1989) was an American physicist, engineer, and inventor who led the research team credited with developing the transistor in 1947. For his achievements, Shockley shared the 1956 Nobel Prize in Physics.
William Shockley was born in London, England, on 13th February, 1910, the son of William Hillman Shockley, a mining engineer born in Massachusetts and his wife, Mary ( née Bradford) who had also been engaged in mining, being a deputy mineral surveyor in Nevada.
