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Leo Esaki. Nobel Prize in Physics 1973 together with Ivar Giaeverand Brian D. Josephson. "for their experimental discoveries regarding tunneling phenomena in semiconductors and superconductors, respectively. Reiona ‘Leo’ Esaki was born in Osaka, Japan, on 12 March, 1925, in the final stages of the Taishō period, during which Japan ...
2. Mai 2024 · Leo Esaki erhielt 1973 zusammen mit Ivar Giaever und Brian David Josephson den Physik-Nobelpreis für experimentelle Entdeckungen, die das Tunnel-Phänomen in Halb- beziehungsweise Supraleitern betrafen. 1974 wurde er als Bunka Kōrōsha, als Person mit besonderen kulturellen Verdiensten geehrt und zugleich mit dem vom Kaiser verliehen Kulturorden ausgezeichnet. 1998 erhielt er den Japan-Preis.
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A Wikimédia Commons tartalmaz Leo Esaki témájú médiaállományokat. Esaki Leo (született: Esaki Reona, japánul: 江崎 玲於奈) ( Oszaka, 1925. március 12. –) japán fizikus, 1973 -ban Ivan Giaeverrel és Brian Josephsonnal megosztva kapta meg a fizikai Nobel-díjat. A szilárdtestek és a szupravezetés vizsgálatával foglalkozik.
Leo Esaki, născut Leona Esaki, (în japoneză 江崎 玲於奈 Esaki Reona, n. 12 martie 1925 , Takaida ( d ) , Prefectura Osaka , Japonia ) este un fizician japonez , laureat al Premiului Nobel pentru Fizică în 1973 împreună cu Ivar Giaever și Brian David Josephson pentru descoperirea fenomenului de tunelare a electronilor .
Brian David Josephson. The Nobel Prize in Physics 1973 was divided, one half jointly to Leo Esaki and Ivar Giaever "for their experimental discoveries regarding tunneling phenomena in semiconductors and superconductors, respectively" and the other half to Brian David Josephson "for his theoretical predictions of the properties of a supercurrent ...
In 1969, Dr. ESAKI predicted that if one-dimensional periodic structural changes are artificially built in semiconductor crystals, semiconductor superlattices will be formed to induce unique phenomena such as a differential negative-resistance effect. He developed a thin-film crystal growth method, which can be regulated quite precisely in ultrahigh vacuum, called molecular beam epitaxy. In ...
