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6. Mai 2024 · Jilin University. [Photo/jlu.edu.cn] Located in Changchun, capital of Jilin province, Jilin University (JLU) is a national comprehensive university under the direction of the Ministry of Education. The university, founded in 1946, was one of the first group of 22 universities granted permission to admit postgraduates. It became one of the first ...
1. Mai 2024 · Find 15314 researchers and browse 243 departments, publications, full-texts, contact details and general information related to Jilin University | Changchun, China | JUT.
Vor einem Tag · Jilin Medcial University ranking in China among the top universities is highly regarded internationally. According to the QS World University Rankings, Jilin University is ranked within the top 500 universities globally. Its strong emphasis on research and innovation has contributed to its reputation as a center of academic excellence.
Vor einem Tag · The story revolves around a Jilin University graduate from China who developed a fascination with Japan through dramas and anime. This interest led her to study Japanese and eventually aspire to work in Japan. Despite initial uncertainties, she was drawn to the nurturing environment of Japanese companies and the prospect of professional growth.
Vor 2 Tagen · Jilin University, State Key Laboratory of Inorganic Synthesis & Preparative Chemistry, CHINA. Search for more papers by this author. Gang Wu, Corresponding Author. Gang Wu [email protected] Jilin University, Chemistry Department, Qianjin ...
Vor einem Tag · High-entropy oxides (HEOs), featuring infinite chemical composition and exceptional physicochemical properties, are attracting much attention. The configurational entropy caused by a component disorder of HEOs is popularly believed to be the main driving force for thermal stability, while the role of vibrational entropy in the thermodynamic landscape has been neglected. In this study, we ...
Vor 2 Tagen · To improve the performance of Cu2ZnSn(S,Se)4 solar cells, a strategy is proposed to improve the quality of absorber and back interface simultaneously by substituting V-doped Mo (Mo:V) for a conventional Mo back electrode and incorporating Ag into the Cu2ZnSn(S,Se)4 (ACZTSSe) absorber in this work. Since p+-type V-doped MoSe2 (MoSe2:V) is formed in the site between the absorber and Mo:V during ...
